Padmanabhan, Revathy and Bhat, Navakanta and Mohan, S (2012) High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric. In: IEEE Transactions on Electron Devices, 59 (5). pp. 1364-1370.
06177656.pdf - Published Version
Restricted to Registered users only
Download (796Kb) | Request a copy
We report the first demonstration of metal-insulator-metal (MIM) capacitors with Eu2O3 dielectric for analog and DRAM applications. The influence of different anneal conditions on the electrical characteristics of the fabricated MIM capacitors is studied. FG anneal results in high capacitance density (7 fF/mu m(2)), whereas oxygen anneal results in low quadratic voltage coefficient of capacitance (VCC) (194 ppm/V-2 at 100 kHz), and argon anneal results in low leakage current density (3.2 x 10(-8) A/cm(2) at -1 V). We correlate these electrical results with the surface chemical states of the films through X-ray photoelectron spectroscopy measurements. In particular, FG anneal and argon anneal result in sub-oxides, which modulate the electrical properties.
|Item Type:||Journal Article|
|Additional Information:||Copyright 2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Keywords:||Eu2O3;metal-insulator-metal (MIM);voltage coefficient of capacitance (VCC)|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering
Other Centres/Units/UG Programme > Centre for Nano Science and Engineering
|Date Deposited:||21 Aug 2012 04:06|
|Last Modified:||21 Aug 2012 04:08|
Actions (login required)