Abraham, Aby and Jandhyala, Srivatsava and Mahapatra, Santanu (2012) Improvements in Efficiency of Surface Potential Computation for Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 59 (4). pp. 1199-1202.
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A robust numerical solution of the input voltage equations (IVEs) for the independent-double-gate metal-oxide-semiconductor field-effect transistor requires root bracketing methods (RBMs) instead of the commonly used Newton-Raphson (NR) technique due to the presence of nonremovable discontinuity and singularity. In this brief, we do an exhaustive study of the different RBMs available in the literature and propose a single derivative-free RBM that could be applied to both trigonometric and hyperbolic IVEs and offers faster convergence than the earlier proposed hybrid NR-Ridders algorithm. We also propose some adjustments to the solution space for the trigonometric IVE that leads to a further reduction of the computation time. The improvement of computational efficiency is demonstrated to be about 60% for trigonometric IVE and about 15% for hyperbolic IVE, by implementing the proposed algorithm in a commercial circuit simulator through the Verilog-A interface and simulating a variety of circuit blocks such as ring oscillator, ripple adder, and twisted ring counter.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article is belongs to IEEE.|
|Keywords:||Circuit simulation;compact modeling;independent-double-gate metal;oxide;semiconductor;field effect transistor (IDG MOSFET)|
|Department/Centre:||Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)|
|Date Deposited:||13 Aug 2012 10:32|
|Last Modified:||13 Aug 2012 10:32|
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