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Studies on electrical switching behavior and optical band gap of amorphous Ge-Te-Sn thin films

Das, Chandasree and Mahesha, MG and Rao, Mohan G and Asokan, S. (2012) Studies on electrical switching behavior and optical band gap of amorphous Ge-Te-Sn thin films. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 106 (4). pp. 989-994.

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Official URL: http://dx.doi.org/10.1007/s00339-011-6726-0

Abstract

Amorphous thin film Ge15Te85-xSnx (1 <= x <= 5) and Ge17Te83-xSnx (1 <= x <= 4) switching devices have been deposited in sandwich geometry using a flash evaporation technique, with aluminum as the top and bottom electrodes. Electrical switching studies indicate that these films exhibit memory type electrical switching behavior. The switching fields for both the series of samples have been found to decrease with increase in Sn concentration, which confirms that the metallicity effect on switching fields/voltages, commonly seen in bulk glassy chalcogenides, is valid in amorphous chalcogenide thin films also. In addition, there is no manifestation of rigidity percolation in the composition dependence of switching fields of Ge15Te85-xSnx and Ge17Te83-xSnx amorphous thin film samples. The observed composition dependence of switching fields of amorphous Ge15Te85-xSnx and Ge17Te83-xSnx thin films has been understood on the basis of Chemically Ordered Network model. The optical band gap for these samples, calculated from the absorption spectra, has been found to exhibit a decreasing trend with increasing Sn concentration, which is consistent with the composition dependence of switching fields.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Springer
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 02 Aug 2012 05:52
Last Modified: 02 Aug 2012 05:52
URI: http://eprints.iisc.ernet.in/id/eprint/44531

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