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Microelectromechanical torsional varactors with low parasitic capacitances and high dynamic range

Venkatesh, Chenniappan and Bhat, Navakanta and Vinoy, KJ and Grandhi, Satish (2012) Microelectromechanical torsional varactors with low parasitic capacitances and high dynamic range. In: JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 11 (1).

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Official URL: http://dx.doi.org/10.1117/1.JMM.11.1.013006

Abstract

This work focuses on the design of torsional microelectromechanical systems (MEMS) varactors to achieve highdynamic range of capacitances. MEMS varactors fabricated through the polyMUMPS process are characterized at low and high frequencies for their capacitance-voltage characteristics and electrical parasitics. The effect of parasitic capacitances on tuning ratio is studied and an equivalent circuit is developed. Two variants of torsional varactors that help to improve the dynamic range of torsional varactors despite the parasitics are proposed and characterized. A tuning ratio of 1:8, which is the highest reported in literature, has been obtained. We also demonstrate through simulations that much higher tuning ratios can be obtained with the designs proposed. The designs and experimental results presented are relevant to CMOS fabrication processes that use low resistivity substrate. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). DOI: 10.1117/1.JMM.11.1.013006]

Item Type: Journal Article
Additional Information: Copyright for this article belongs to SPIE
Keywords: MEMS varactors;tuning ratio;parasitics
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 19 Jun 2012 10:01
Last Modified: 19 Jun 2012 10:01
URI: http://eprints.iisc.ernet.in/id/eprint/44562

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