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Physics-Based Band Gap Model for Relaxed and Strained 100] Silicon Nanowires

Ghosh, Ram Krishna and Bhattacharya, Sitangshu and Mahapatra, Santanu (2012) Physics-Based Band Gap Model for Relaxed and Strained 100] Silicon Nanowires. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 (6). pp. 1765-1772.

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Official URL: http://dx.doi.org/10.1109/TED.2012.2190737

Abstract

In this paper, we propose a physics-based simplified analytical model of the energy band gap and electron effective mass in a relaxed and strained rectangular 100] silicon nanowires (SiNWs). Our proposed formulation is based on the effective mass approximation for the nondegenerate two-band model and 4 x 4 Luttinger Hamiltonian for energy dispersion relation of conduction band electrons and the valence band heavy and light holes, respectively. Using this, we demonstrate the effect of the uniaxial strain applied along 100]-direction and a biaxial strain, which is assumed to be decomposed from a hydrostatic deformation along 001] followed by a uniaxial one along the 100]-direction, respectively, on both the band gap and the transport and subband electron effective masses in SiNW. Our analytical model is in good agreement with the extracted data using the extended-Huckel-method-based numerical simulations over a wide range of device dimensions and applied strain.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the IEEE
Keywords: Band gap;effective mass;nanowires;size quantization;strain
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)
Date Deposited: 14 Jul 2012 06:51
Last Modified: 14 Jul 2012 06:51
URI: http://eprints.iisc.ernet.in/id/eprint/44682

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