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Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE

Kumar, Mahesh and Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE. In: MATERIALS RESEARCH BULLETIN, 47 (6). pp. 1306-1309.

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Official URL: http://dx.doi.org/10.1016/j.materresbull.2012.03.0...

Abstract

The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. (C) 2012 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to Elsevier Ltd
Keywords: Nitrides;Epitaxial growth;Luminescence
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 14 Jul 2012 07:02
Last Modified: 14 Jul 2012 07:03
URI: http://eprints.iisc.ernet.in/id/eprint/44686

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