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Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells

Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R (2011) Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells. In: BULLETIN OF MATERIALS SCIENCE, 34 (7). pp. 1645-1648.

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Official URL: http://www.ias.ac.in/matersci/bmsdec2011/1645.pdf

Abstract

The photoluminescence study of Fermi-edge singularity (FES) in modulation-doped pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs quantum well (QW) heterostructures is presented. In the above QW structures the optical transitions between n = 1 and n = 2 electronic subband to the n = 1 heavy hole subband (E-11 and E-21 transitions, respectively) are observed with FES appearing as a lower energy shoulder to the E-21 transition. The observed FES is attributed to the Fermi wave vector in the first electronic subband under the conditions of population of the second electronic subband. The FES appears at about 10 meV below E-21 transition around 4.2 K. Initially it gets stronger with increasing temperature and becomes a distinct peak at about 20 K. Further increase in temperature quenches FES and reaches the base line at around 40 K.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the Indian Academy of Sciences
Keywords: Photoluminescence;Fermi edge singularity;modulation doping
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 22 Jun 2012 10:46
Last Modified: 22 Jun 2012 10:51
URI: http://eprints.iisc.ernet.in/id/eprint/44723

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