Srivastav, Vanya and Pal, R and Sareen, L and Venkataraman, V (2012) Analysis of current voltage characteristics of MWIR homojunction photodiodes for uncooled operation. In: INFRARED PHYSICS & TECHNOLOGY, 55 (4). pp. 270-274.
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Dark currents n(+)/v/p(+) Hg0.69Cd0.Te-31 mid wave infrared photodiodes were measured at room temperature. The diodes exhibited negative differential resistance at room-temperature, but with increasing leakage currents as a function of reverse bias. The current-voltage characteristics were simulated and fitted by incorporating trap assisted tunneling via traps and Shockley-Read-Hall generation recombination process due to dislocations in the carrier transport equations. The thermal suppression of carriers was simulated by taking energy level of trap (E-t), trap density (N-t) and the doping concentrations of n(+) and v regions as fitting parameters. Values of E-t and N-t were 0.78E(g) and similar to 6-9 x 10(14) cm(-3) respectively for most of the diodes. Variable temperature current voltage measurements on variable area diode array (VADA) structures confirmed the fact that variation in zero bias resistance area product (R(0)A) is related to g-r processes originating from variation in concentration and kind of defects that intersect a junction area. (C) 2012 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copy right for this article belongs to Elsiver Ltd|
|Keywords:||High operating temperature HgCdTe detectors;Trap density;Thermal suppression;Variable temperature;Variable area diode array|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||13 Aug 2012 09:52|
|Last Modified:||13 Aug 2012 09:52|
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