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Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetry

Jandhyala, S and Mahapatra, S (2012) Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetry. In: ELECTRONICS LETTERS, 48 (13). pp. 794-795.

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Official URL: http://dx.doi.org/10.1049/el.2012.1295

Abstract

Since it is difficult to find the analytical solution of the governing Poisson equation for double gate MOSFETs with the body doping term included, the majority of the compact models are developed for undoped-body devices for which the analytical solution is available. Proposed is a simple technique to included a body doping term in such surface potential based common double gate MOSFET models also by taking into account any differences between the gate oxide thickness. The proposed technique is validated against TCAD simulation and found to be accurate as long as the channel is fully depleted.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the IEEE
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)
Date Deposited: 28 Aug 2012 06:48
Last Modified: 10 Sep 2012 12:29
URI: http://eprints.iisc.ernet.in/id/eprint/44983

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