ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2012) Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy. In: APPLIED PHYSICS EXPRESS, 5 (8).

[img]
Preview
PDF
app_phy_exp_5-8_2012.pdf - Published Version

Download (2273Kb) | Preview
Official URL: http://dx.doi.org/10.1143/APEX.5.085202

Abstract

The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%. (C) 2012 The Japan Society of Applied Physics

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the Japan Society of Applied Physics
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 11 Sep 2012 07:56
Last Modified: 11 Sep 2012 07:56
URI: http://eprints.iisc.ernet.in/id/eprint/45014

Actions (login required)

View Item View Item