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Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB (2012) Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction. In: Journal of Applied Physics, 112 (2).

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Official URL: http://dx.doi.org/10.1063/1.4739261

Abstract

The temperature dependent current transport properties of nonpolar a-plane (11 2 0) InN/GaN heterostructure Schottky junction were investigated. The barrier height ( b) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(I s/T 2) versus 1/kT has two regions: the first region (150-300 K) and the second region (350-500 K). The values of Richardson constant (A +) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values ( b ) of 1.17 and 0.69 eV with standard deviation (� s) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350-500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150-300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism. © 2012 American Institute of Physics.

Item Type: Journal Article
Additional Information: Copyright for theis article belongs to the American Institute of Physics
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 12 Sep 2012 07:53
Last Modified: 12 Sep 2012 07:53
URI: http://eprints.iisc.ernet.in/id/eprint/45055

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