Sekhar, Chandra M and Kondaiah, P and Chandra, Jagadeesh SV and Rao, Mohan G and Uthanna, S (2012) Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric. In: SURFACE AND INTERFACE ANALYSIS, 44 (9). pp. 1299-1304.Full text not available from this repository.
DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to WILEY-BLACKWELL,USA.|
|Keywords:||titanium dioxide;MOS capacitor;leakage current;dielectric; optical properties|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||27 Nov 2012 10:15|
|Last Modified:||27 Nov 2012 10:15|
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