ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface

Aamir, MA and Goswami, Srijit and Baenninger, Matthias and Tripathi, Vikram and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2012) Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface. In: PHYSICAL REVIEW B, 86 (8).

[img] PDF
Phy_RevB_2012.pdf - Published Version
Restricted to Registered users only

Download (733Kb) | Request a copy
Official URL: http://dx.doi.org/10.1103/PhysRevB.86.081203

Abstract

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal nonsaturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to AMER PHYSICAL SOC
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 Nov 2012 11:30
Last Modified: 19 Nov 2012 11:30
URI: http://eprints.iisc.ernet.in/id/eprint/45145

Actions (login required)

View Item View Item