Prasad, Soma and Paul, Aloke (2012) Diffusion mechanism in XSi2 and X5Si3 (X= Nb, Mo, V) phases. In: International Conference on Diffusion in Materials (DIMAT 2011), JUL 03-08, 2011, ICB Lab, Dijon, FRANCE, pp. 459-464.
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In view of the importance of the suicides in the high temperature applications, the diffusion behaviour is compared in different systems for two types of silicides, XSi2 and X5Si3 (X=Nb, Mo, V). Atomic mechanism of diffusion and defects present in the structure are discussed. In both the phases, Si has faster diffusion rate than the metal species. This is expected from the nearest neighbour (NN) bonds present in the XSi2 phase but rather unusual in the X5Si3 phase. Relative mobilities of the species calculated indicate the presence of high concentration of Si antisites. Moreover, the concentration of the defects is different in different systems to find different diffusion rates.
|Item Type:||Conference Proceedings|
|Keywords:||Interdiffusion; Silicides; Defects|
|Department/Centre:||Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)|
|Date Deposited:||16 Oct 2012 05:41|
|Last Modified:||17 Oct 2012 05:31|
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