SEU Reliability Improvement Due to Source-Side Charge Collection in the Deep-Submicron SRAM Cell

Saxena, Prashant Kumar and Bhat, Navakanta (2003) SEU Reliability Improvement Due to Source-Side Charge Collection in the Deep-Submicron SRAM Cell. In: IEEE Transactions on Device and Materials Reliability, 3 (1). pp. 14-17.

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The effect of technology scaling $(0.5-0.09\mu{m})$ on single event upset (SEU) phenomena is investigated using full two-dimensional device simulation. The SEU reliability parameters, such as critical charge $(Q_{crit})$, feedback time $(T_{fd})$ and linear energy transfer (LET), are estimated. For $L_g<0.18\mu{m}$, the source node collects a significant fraction of radiation-induced charge resulting in an increase of LET, despite the lower critical charge at the sensitive drain node. The effect of striking location on LET confirms this finding.