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Wurtzite InN nanodots on Si(100) by molecular beam epitaxy

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Wurtzite InN nanodots on Si(100) by molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011, Kanpur, INDIA.

Full text not available from this repository.
Official URL: http://dx.doi.org/10.1117/12.927424

Abstract

Studies were carried on the growth behavior of InN nanodots by plasma assisted molecular beam epitaxy on bare Si(100) substrates and their structural, optical, electrical properties. The growth was carried out by two different methods such as, (i) mono-step growth process at a low temperature and a (ii) bi-step growth process with the combination of low and high temperatures for the formation of single crystalline nanodots with well defined crystallographic facets due to cluster migration. Low temperature photoluminescence shows a free excitonic (FE) luminescence at 0.80 eV. The Raman spectroscopy and X-ray diffraction studies reveal that the nanodots as well as the film were of wurtzite structure and strain free.

Item Type: Conference Proceedings
Related URLs:
Additional Information: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), Kanpur, INDIA, DEC 19-22, 2011
Keywords: PA-MBE; Indium nitride; Nanodots
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 07 Nov 2013 06:20
Last Modified: 07 Nov 2013 06:20
URI: http://eprints.iisc.ernet.in/id/eprint/47699

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