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Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011 , Kanpur, INDIA.

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Official URL: http://dx.doi.org/10.1117/12.927418

Abstract

The growth of nonpolar a- plane (1 1 -2 0) orientation of the GaN epilayers were confirmed by high resolution x-ray diffraction studies. An in-plane orientation relationship was found to be 0 0 0 1] GaN parallel to -1 1 0 1] sapphire and -1 1 0 0] GaN parallel to 1 1 -2 0] sapphire. SEM image shows the reasonably smooth surface. The photoluminescence spectrum shows near band emission (NBE) at 3.439 eV. The room temperature I-V characteristics of Au/a-GaN schottky diode performed. The Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/a-GaN schottky diode found to be 0.50 eV and 2.01 respectively.

Item Type: Conference Proceedings
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Additional Information: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), Kanpur, INDIA, DEC 19-22, 2011
Keywords: Nonpolar GaN; molecular beam epitaxy; Schottky diode
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 07 Nov 2013 06:25
Last Modified: 07 Nov 2013 06:25
URI: http://eprints.iisc.ernet.in/id/eprint/47701

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