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An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Chandrasekar, Hareesh and Mohan, Nagaboopathy and Bardhan, Abheek and Bhat, KN and Bhat, Navakanta and Ravishankar, N and Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. In: Applied Physics Letters, 103 (21). 211902_1-211902_.

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Official URL: http://dx.doi.org/10.1063/1.4831968

Abstract

The integration of Metal Organic Chemical Vapor Deposition (MOCVD) grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus > 1GPa), and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface, and crystal quality. (C) 2013 AIP Publishing LLC.

Item Type: Journal Article
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Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Electrical Sciences > Electrical Communication Engineering
Other Centres/Units/UG Programme > Centre for Nano Science and Engineering
Date Deposited: 07 Jan 2014 09:50
Last Modified: 07 Jan 2014 09:50
URI: http://eprints.iisc.ernet.in/id/eprint/48111

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