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Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

Aamir, Mohammed Ali and Goswami, Srijit and Baenniger, Matthias and Tripathi, Vikram and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2013) Large linear magnetoresistance in a GaAs/AlGaAs heterostructure. In: 31st International Conference on the Physics of Semiconductors (ICPS), JUL 29-AUG 03, 2012, Zurich, SWITZERLAND, pp. 255-256.

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Abstract

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Item Type: Conference Proceedings
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Additional Information: Copyright for this article belongs to the AMER INST PHYSICS, USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 21 May 2014 06:45
Last Modified: 21 May 2014 06:45
URI: http://eprints.iisc.ernet.in/id/eprint/48893

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