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Stable and low resistive zinc contacts for SnS based optoelectronic devices

Reddy, Koteeswara N and Devika, M and Gunasekhar, K (2014) Stable and low resistive zinc contacts for SnS based optoelectronic devices. In: THIN SOLID FILMS, 558 . pp. 326-329.

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Official URL: http://dx.doi.org/10.1016/j.tsf.2014.02.083

Abstract

The contact behavior of tin mono sulfide (SnS) nanocrystalline thin films with zinc (Zn) and silver (Ag) contacts was studied. SnS films have been deposited on glass substrates by thermal evaporation technique at a growth temperature of 300 degrees C. The as-grown SnS films composed of vertically aligned nanocrystallites with a preferential orientation along the < 010 > direction. SnS films exhibited excellent chemical stoichiometry and direct optical band gap of 1.96 eV. These films also exhibited excellent Ohmic characteristics and low electrical resistivity with Zn contacts. The observed electrical resistivity of SnS films with Zn contacts is 22 times lower than that of the resistivity with Ag contacts. The interfacing analysis reveals the formation of conductive Zn-S layer between SnS and Zn as interfacial layer. (C) 2014 Elsevier B. V. All rights reserved.

Item Type: Journal Article
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Additional Information: Copyright for this article belongs to the ELSEVIER SCIENCE SA, SWITZERLAND
Keywords: Metal contacts; IV-VI semiconductors; Nanocrystalline materials; Electrical properties; Materials interface; Solar energy materials
Department/Centre: Division of Mechanical Sciences > Aerospace Engineering (Formerly, Aeronautical Engineering)
Other Centres/Units/UG Programme > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 03 Jun 2014 08:36
Last Modified: 03 Jun 2014 08:36
URI: http://eprints.iisc.ernet.in/id/eprint/49114

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