Reddy, Koteeswara N and Devika, M and Gunasekhar, KR (2014) Influence of seed layer orientation on the growth and physical properties of SnS nanostructures. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 116 (3). pp. 1193-1197.
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Stoichiometric tin (II) sulfide (SnS) nano-structures were synthesized on SnS(010)/glass substrates using a simple and low-temperature chemical solution method, and their physical properties were investigated. The as-synthesized SnS nanostructures exhibited orthorhombic crystal structure and most of the nanocrystals are preferentially oriented along the <010> direction. These nanostructures showed p-type electrical conductivity and high electrical resistivity of 93 Omega cm. SnS nanostructures exhibited a direct optical band gap of 1.43 eV. While increasing the surrounding temperature from 20 to 150 degrees C, the electrical resistivity of the structures decreased and exhibited the activation energy of 0.28 eV.
|Item Type:||Journal Article|
|Additional Information:||Copy right for this article belongs to the SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA|
|Department/Centre:||Division of Mechanical Sciences > Aerospace Engineering (Formerly, Aeronautical Engineering)
Other Centres/Units/UG Programme > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
|Date Deposited:||24 Sep 2014 05:47|
|Last Modified:||24 Sep 2014 05:47|
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