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An Advanced Gate Driver for Insulated Gate Bipolar Transistors to Eliminate Dead-time Induced Distortions in Inverter Output

Datta, Aniket and Guha, Anirudh and Narayanan, G (2014) An Advanced Gate Driver for Insulated Gate Bipolar Transistors to Eliminate Dead-time Induced Distortions in Inverter Output. In: IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2014, Dec 16-19, 2014, IIT Bomabay.

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Abstract

Dead-time is introduced between the gating signals to the top and bottom switches in a voltage source inverter (VSI) leg, to prevent shoot through fault due to the finite turn-off times of IGBTs. The dead-time results in a delay when the incoming device is an IGBT, resulting in error voltage pulses in the inverter output voltage. This paper presents the design, fabrication and testing of an advanced gate driver, which eliminates dead-time and consequent output distortion. Here, the gating pulses are generated such that the incoming IGBT transition is not delayed and shoot-through is also prevented. The various logic units of the driver card and fault tolerance of the driver are verified through extensive tests on different topologies such as chopper, half-bridge and full-bridge inverter, and also at different conditions of load. Experimental results demonstrate the improvement in the load current waveform quality with the proposed circuit, on account of elimination of dead-time.

Item Type: Conference Paper
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Additional Information: Copyright for this article belongs to the IEEE, USA
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 13 Jan 2015 05:30
Last Modified: 13 Jan 2015 05:30
URI: http://eprints.iisc.ernet.in/id/eprint/50662

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