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PECVD grown SiC cantilevers with Dry and Wet Release

Umamaheswara, Adithi and Nair, Smitha and Lavendra, L and Gupta, Suman and Vijayaraghavan, MN and Bhat, Navakanta (2014) PECVD grown SiC cantilevers with Dry and Wet Release. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 10-14, 2013, Noida, INDIA, pp. 421-423.

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Abstract

Cantilevers made out of PECVD grown SiC films are reported here. The cantilevers were realized in two different methods isotropic etch (Dry release) and combination of wet etch and critical point dry release. The dry release process for Silicon isotropic etch results in excellent etch selectivity against SiC, to provide released structures. The optimized wet release process is able to overcome stiction issues to provide excellent SiC cantilevers.

Item Type: Conference Proceedings
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Additional Information: Copyright for this article belongs to the SPRINGER INT PUBLISHING AG, GEWERBESTRASSE 11, CHAM, CH-6330, SWITZERLAND
Keywords: SiC; PECVD; cantilevers
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 14 Feb 2015 13:36
Last Modified: 14 Feb 2015 13:36
URI: http://eprints.iisc.ernet.in/id/eprint/50832

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