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High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors

Amin, Kazi Rafsanjani and Bid, Aveek (2015) High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors. In: ACS APPLIED MATERIALS & INTERFACES, 7 (35). pp. 19825-19830.

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Official URL: http://dx.doi.org/10.1021/acsami.5b05922

Abstract

One of the most interesting predicted applications of graphenemonolayer-based devices is as high-quality sensors. In this article, we show, through systematic experiments, a chemical vapor sensor based on the measurement of lowfrequency resistance fluctuations of single-layer-graphene field-effect-transistor devices. The sensor has extremely high sensitivity, very high specificity, high fidelity, and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than 2 orders of magnitude better than a detection scheme in which changes in the average value of the resistance is monitored. We propose a number-densityfluctuation-based model to explain the superior characteristics of a noisemeasurement-based detection scheme presented in this article.

Item Type: Journal Article
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Additional Information: Copy right for this article belongs to the AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Keywords: graphene; field-effect transistor; sensor; resistance fluctuations; noise; number-density fluctuation
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 15 Oct 2015 06:15
Last Modified: 15 Oct 2015 06:15
URI: http://eprints.iisc.ernet.in/id/eprint/52553

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