ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Binary group III-nitride based heterostructures: band offsets and transport properties

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Krupanidhi, SB (2015) Binary group III-nitride based heterostructures: band offsets and transport properties. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 48 (42).

[img] PDF
Jou_Phy_48-42_ 423001_2015.pdf - Published Version
Restricted to Registered users only

Download (3296Kb) | Request a copy
Official URL: http://dx.doi.org/10.1088/0022-3727/48/42/423001 ...

Abstract

In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.

Item Type: Journal Article
Related URLs:
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Keywords: III nitride heterostructures; non-polar nitrides; band offset engineering
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 02 Jan 2016 10:14
Last Modified: 02 Jan 2016 10:14
URI: http://eprints.iisc.ernet.in/id/eprint/53016

Actions (login required)

View Item View Item