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Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Nath, Digbijoy N and Bhat, Navakanta (2016) Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET. In: IEEE ELECTRON DEVICE LETTERS, 37 (1). pp. 119-122.

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Official URL: http://dx.doi.org/10.1109/LED.2015.2501323

Abstract

A new method for the separation of contact resistance (R-contact) into Schottky barrier resistance (R-SB) and interlayer resistance (R-IL) is proposed for multilayered MoS2 FETs. While R-SB varies exponentially with Schottky barrier height (Phi(bn)), R-IL essentially remains unchanged. An empirical model utilizing this dependence of R-contact versus Phi(bn) is proposed and fits to the experimental data. The results, on comparison with the existing reports of lowest R-contact, suggest that the extracted R-IL (1.53 k Omega.mu m) for an unaltered channel would determine the lower limit of intrinsic R-contact even for barrierless contacts for multilayered exfoliated MoS2 FETs.

Item Type: Journal Article
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Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Keywords: Contact resistance; interlayer resistance; Schottky barrier resistance; multilayer MoS2 FET; intrinsic limit
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Other Centres/Units/UG Programme > Centre for Nano Science and Engineering
Date Deposited: 20 Jan 2016 05:44
Last Modified: 20 Jan 2016 05:44
URI: http://eprints.iisc.ernet.in/id/eprint/53137

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