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Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

Bardhan, Abheek and Mohan, Nagaboopathy and Soman, Rohith and Manikant, * and Raghavan, Srinivasan (2016) Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111). In: IETE TECHNICAL REVIEW, 33 (1, SI). pp. 82-87.

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Official URL: http://dx.doi.org/10.1080/02564602.2015.1054903

Abstract

An efficient buffer layer scheme has been designed to address the issue of curvature management during metalorganic chemical vapour deposition growth of GaN on Si (111) substrate. This is necessary to prevent cracking of the grown layer during post-growth cooling down from growth temperature to room temperature and to achieve an allowable bow (<40 m) in the wafer for carrying out lithographic processes. To meet both these ends simultaneously, the stress evolution in the buffer layers was observed carefully. The reduction in precursor flow during the buffer layer growth provided better control over curvature evolution in the growing buffer layers. This has enabled the growth of a suitable high electron mobility transistor (HEMT) stack on 2'' Si (111) substrate of 300 m thickness with a bow as low as 11.4 m, having a two-dimensional electron gas (2DEG) of mobility, carrier concentration, and sheet resistance values 1510 cm(2)/V-s, 0.96 x 10(13)/cm(2), and 444 /, respectively. Another variation of similar technique resulted in a bow of 23.4 m with 2DEG mobility, carrier concentration, and sheet resistance values 1960 cm(2)/V-s, 0.98 x 10(13)/cm(2), and 325 /, respectively.

Item Type: Journal Article
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Additional Information: Copy right for this article belongs to the TAYLOR & FRANCIS LTD, 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND
Keywords: Aluminium gallium nitride; bow; Curvature; dislocation bending; Gallium nitride; HEMTs; Semiconductor growth; Stress control; Two dimensional electron gas
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Electrical Sciences > Electrical Communication Engineering
Other Centres/Units/UG Programme > Centre for Nano Science and Engineering
Date Deposited: 28 Apr 2016 04:58
Last Modified: 28 Apr 2016 04:58
URI: http://eprints.iisc.ernet.in/id/eprint/53746

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