ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

An Integrated X-band FMCW Radar Transceiver in 130-nm CMOS Technology

Chowdary, Aditya T and Banerjee, Gaurab (2015) An Integrated X-band FMCW Radar Transceiver in 130-nm CMOS Technology. In: IEEE International Microwave and RF Conference, DEC 10-12, 2015, Hyderabad, INDIA, pp. 151-154.

[img] PDF
IEEE_Int_Mic_151_2015.pdf - Published Version
Restricted to Registered users only

Download (216Kb) | Request a copy
Official URL: http://ieeexplore.ieee.org/search/searchresult.jsp...

Abstract

A fully integrated low power X-band radar transceiver in 130 nm CMOS process is presented. The highly integrated sub-system includes a low-noise amplifier (LNA), a voltage buffer, a down-conversion mixer, a low pass filter (LPF), a voltage controlled oscillator (VCO), a VCO buffer and two power amplifier (PA) drivers. The receiver provides a voltage conversion gain of 10 dB. The output power of the transmitter including the PA is -2 dBm. The total DC power consumption of the transceiver is 36 mW from a 1.2 V supply and the size of the chip is 670 x 716 mu m(2).

Item Type: Conference Proceedings
Related URLs:
Additional Information: Copy right of this article belongs to the IEEE
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Others
Date Deposited: 08 Oct 2016 06:39
Last Modified: 08 Oct 2016 06:39
URI: http://eprints.iisc.ernet.in/id/eprint/54779

Actions (login required)

View Item View Item