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Simulation studies of p-doped ZnO MSM Photodetector with Plasmonic Enhancement

Fathima, Nazia and Shetty, Arjun and Balakrishnan, Jyothi (2016) Simulation studies of p-doped ZnO MSM Photodetector with Plasmonic Enhancement. In: International Conference on Advances in Materials and Manufacturing Applications (IConAMMA), JUL 14-16, 2016, Bangalore, INDIA.

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Official URL: http://dx.doi.org/10.1088/1757-899X/149/1/012170

Abstract

This paper presents the simulation studies of Metal-Semiconductor-Metal (MSM) Photodetector (PD) with and without plasmonic enhancement. The simulations were carried out using COMSOL Multiphysics (R) software. The semiconductor layer was p-type ZnO with a doping concentration of 10(16)/cm(3). The plasmonic layer was of Au nanoparticles. The PD was irradiated with 10W UV radiation of wavelength 280nm. The output currents of MSM PD with and without plasmonic layer were found to be similar to 0.9x10(-7)A and similar to 0.8x10(-8)A respectively. It was observed that there is an appreciable increase (factor of 10) in photo current in devices with a plasmonic layer. The effect of change in the size of Au nano particles on output photocurrent was also studied.

Item Type: Conference Proceedings
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Additional Information: Copy right for this article is belongs to IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 09 Feb 2017 07:07
Last Modified: 09 Feb 2017 07:07
URI: http://eprints.iisc.ernet.in/id/eprint/56229

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