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Metal-insulator-semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers

Mudusu, Devika and Nandanapalli, Koteeswara Reddy and Dugasani, Sreekantha Reddy and Karuppannan, Ramesh and Reddy, Gunasekhar Kothakota Ramakrishna and Subramanian, Raja Gopal Erode and Park, Sung Ha (2017) Metal-insulator-semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers. In: RSC ADVANCES, 7 (18). pp. 11111-11117.

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Official URL: http://dx.doi.org/10.1039/c7ra00041c
Item Type: Journal Article
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Additional Information: Copy right for this article belongs to the ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
Department/Centre: Division of Mechanical Sciences > Aerospace Engineering (Formerly, Aeronautical Engineering)
Other Centres/Units/UG Programme > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 07 Apr 2017 10:53
Last Modified: 07 Apr 2017 10:53
URI: http://eprints.iisc.ernet.in/id/eprint/56535

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