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Variation of Switching Sub-intervals of IGBT with Device Current and Junction Temperature: An Experimental Study

Das, Subhas Chandra and Narayanan, G (2017) Variation of Switching Sub-intervals of IGBT with Device Current and Junction Temperature: An Experimental Study. In: IEEE Annual India Conference (INDICON), DEC 16-18, 2016, Bangalore, INDIA.

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Official URL: http://dx.doi.org/10.1109/INDICON.2016.7838896

Abstract

In this paper focus is to study various transition subintervals of an IGBT during switching events. The relationship of these transition duration with the switching voltage, device current and junction temperature is studied experimentally. This study is further extended to understand the effect of these time duration deciding the dead time between the switching of positive and negative devices in an inverter leg. Further quantification is made based on these switching sub-intervals in terms of loss of pulse width time in output voltage of an inverter.

Item Type: Conference Proceedings
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Additional Information: IEEE Annual India Conference (INDICON), Bangalore, INDIA, DEC 16-18, 2016
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 10 Jun 2017 04:41
Last Modified: 10 Jun 2017 04:41
URI: http://eprints.iisc.ernet.in/id/eprint/57207

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