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High Room Temperature Hole Mobility In $Ge_{0.7}Si_{0.3}/Ge/Ge_{0.7}Si_{0.3}$ Modulation Doped Heterostructures In The Absence Of parallel Conduction

Madhavi, S and Venkataraman, V and Xie, YH (2000) High Room Temperature Hole Mobility In $Ge_{0.7}Si_{0.3}/Ge/Ge_{0.7}Si_{0.3}$ Modulation Doped Heterostructures In The Absence Of parallel Conduction. In: 58th DRC Device Research Conference, 2000. Conference Digest, 19-21 June, Denver,Colorado, pp. 29-30.

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Abstract

Recently there has been a lot of interest in two dimensional hole gas systems in pure germanium channels, since Ge has the highest intrinsic bulk hole mobility of all the commonly employed semiconductors, being comparable to the electron mobilites in bulk Si. Konig et. al. [l] have reported a maximum extrinsic transconductance of 125mS/mm(290mS/mm) at 300K(77K) in these Ge channel FETs. However, the hole mobility achieved in these systems are limited by roughness scattering at the alloy-Ge interface at low temperatures and by parallel conduction at high temperatures. Engelhardt et. al. [2] have reported a maximum hole mobility of $1300cm^2/Vs$ at room temperature with the channel density changing by about 50% from 4.2K to 300K, indicating the presence of parallel conduction.

Item Type: Conference Paper
Additional Information: Copyright 1990 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 28 Feb 2006
Last Modified: 29 Sep 2010 07:40
URI: http://eprints.iisc.ernet.in/id/eprint/5726

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