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A multi-band low noise amplifier with strong immunity to interferers

Zahir, Zaira and Banerjee, Gaurab and Zeidan, Mohamad A and Abraham, Jacob A (2017) A multi-band low noise amplifier with strong immunity to interferers. In: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 93 (1). pp. 13-27.

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Official URL: http://doi.org/10.1007/s10470-017-1020-5

Abstract

A multi-band low noise amplifier (LNA) is designed to operate over a wide range of frequencies (with center frequencies at 1.2, 1.7 and 2.2 GHz respectively) using an area efficient switchable pi network. The LNA can be tuned to different gain and linearity combinations for different band settings. Depending upon the location of the interferers, a specific band can be selected to provide optimum gain and the best signal-to-intermodulation ratio. This is accomplished by the use of an on-chip built-in-self-test circuit. The maximum power gain of the amplifier is 19 dB with a return loss better than 10 dB for 7 mW of power consumption. The noise figure is 3.2 dB at 1 GHz and its third-order intercept point (IIP3) ranges from -15 to 0 dBm. Implemented in a 0.13 mu m CMOS technology, the LNA occupies an active area of about 0.29 mm. This design can be used for cognitive radio and other wideband applications, which require a dynamic configuration of the signal-to-intermodulation ratio, when sufficient information about the power and the location of the interferers is not available.

Item Type: Journal Article
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Additional Information: Copy right for this article belongs to the SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Division of Electrical Sciences > Electrical Communication Engineering > Electrical Communication Engineering - Technical Reports
Date Deposited: 07 Oct 2017 06:08
Last Modified: 07 Oct 2017 06:08
URI: http://eprints.iisc.ernet.in/id/eprint/57968

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