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Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered $a-Se / As_2S_3$ films

Adarsh, KV and Sangunni, KS and Kokenyesi, S and Ivan, I and Shipljak, M (2005) Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered $a-Se / As_2S_3$ films. In: Journal of Applied Physics, 97 (4). 044314-1-044314-5.

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Abstract

Optical parameters of chalcogenide glass multilayers with 12–15 nm modulation lengths prepared by thermal evaporation can be changed by laser irradiation. Photoluminescence sPLd studies were carried out on such nonirradiated and irradiated multilayered samples of $ a-Se / As_2S_3$ (sublayer thickness of a-Se is 4–5 nm for one set of samples and 1–2 nm for the other set. However $As_2S_3$ sublayer thickness is 11–12 nm for both sets of samples.) PL intensity can be increased by several orders of magnitude by reducing the Se well layer slower band gapd thickness and can be further increased by irradiating the samples with appropriate wavelengths in the range of the absorption edge. The broadening of luminescence bands takes place either with a decrease in Se layer thickness or with irradiation. The former is due to the change in interface roughness and defects because of the enhanced structural disorder while the latter is due to photoinduced interdiffusion. The photoinduced interdiffusion creates defects at the interface between Se and $As_2S_3$ by forming an As–Se–S solid solution. From the deconvoluted PL spectrum, it is shown that the peak PL intensity, full width half maximum, and the PL quantum efficiency of particular defects giving rise to PL, can be tuned by changing the sublayer thickness or by interdiffusion.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 28 Mar 2006
Last Modified: 29 Feb 2012 05:29
URI: http://eprints.iisc.ernet.in/id/eprint/5804

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