Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique

Chaudhuri, Ayan Roy and Laha, Apurba and Krupanidhi, SB (2005) Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique. In: Solid State Communications, 133 (9). pp. 611-614.

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Abstract

$Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films were grown by pulsed laser deposition at substrate temps. ranging between $650 \hspace{3mm} and \hspace{3mm} 750 ^oC$. The structural phase, and orientation of the deposited films were studied to understand the effect of the deposition parameters on the properties of the BTV films. As the substrate temp. was increased to $700 ^oC$, the films started showing a tendency of assuming a c-axis preferred orientation, while at lower temps. polycryst. films were formed. The Au/BTV/Pt capacitor showed an interesting dependence of the remnant polarization $(P_r)$ as well as dc leakage current values on the growth temp. The film deposited at $675 ^oC$ showed a very large $2P_r\hspace{3mm}of\hspace{3mm}42\hspace{3mm}{\mu}C\hspace{3mm}cm^{-2}$, which is the largest for BTV thin films among the values reported so far.

Item Type: Journal Article The Copyright belongs to Elsevier. A. BTV thin films;B. Laser ablation;D. Remnant polarization;D. Electrical properties Division of Chemical Sciences > Materials Research Centre 17 Mar 2006 19 Sep 2010 04:24 http://eprints.iisc.ernet.in/id/eprint/5816