Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2004) Photoluminescence study of biexciton luminescence on the naturally occurring quantum dots in undoped InGaAs/GaAs quantum wells. In: Physica B: Condensed Matter, 353 (3-4). pp. 205-209.
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We report on a photoluminescence study of excitons and biexcitons localized at naturally occurring quantum dots formed due to monolayer well width fluctuations in undoped InGaAs/GaAs quantum wells by macrophotoluminescence measurement. Pseudomorphic InGaAs/GaAs quantum well heterostructures with low indium composition (0.1) were grown by molecular beam epitaxy. At certain positions on the samples, evolution of the spectral features as function of excitation powers shows the formation of biexcitons and their binding energy was found to be about 3 meV.
|Item Type:||Journal Article|
|Additional Information:||The copyright of this article belongs to Elsevier.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||23 Mar 2006|
|Last Modified:||19 Sep 2010 04:24|
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