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Electrical resistivity of Cu doped As–Se glasses at high pressure

Ramesh, K and Rao, Ramesh N and Sangunni, KS and Gopal, ESR (2003) Electrical resistivity of Cu doped As–Se glasses at high pressure. In: Physica Status Solidi (b), 235 (2). pp. 536-541.

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Abstract

Electrical resistivity measurements have been performed on $Cu_xAs_4_0Se_{60-x}$ glasses with x between 0 and 28 at% of Cu. The resistivity of these glasses continuously decreases and saturates at higher quasi-hydrostatic pressures. The pressure derivative of the electrical resistivity shows distinct changes as a function of composition; a large change for the initial addition of Cu (\geq 10 at% Cu) and levelling off for higher content of Cu. To understand this, Differential Scanning Calorimetric (DSC) and thermal crystallization studies have been carried out on all these glasses. Thermal crystallization of As-Se glasses with 5 and 10 at% Cu results in crystalline $Cu_3AsSe_4$ and $As_2Se_3$ phases, whereas glasses with 15 and 20 at% of Cu crystallize into $Cu_3AsSe_4$ phase only. Glasses with 25 and 28 at% of Cu yield a new binary $Cu_2As_3$ and the ternary $Cu_3AsSe_4$ phase. These structural differences arising as a function of composition are reflected in the pressure derivative of the resistivity of the glasses.

Item Type: Journal Article
Additional Information: The copyright belongs to WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 04 Apr 2006
Last Modified: 19 Sep 2010 04:25
URI: http://eprints.iisc.ernet.in/id/eprint/6164

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