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Integrated $Ba(Sn,Ti)O_3$ films for microactuator applications

Halder, Sandip and Krupanidhi, Saluru B (2003) Integrated $Ba(Sn,Ti)O_3$ films for microactuator applications. In: SPIE: Smart Materials, Structures, and Systems, October 2003, Vol.5062, 488-492.

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Abstract

Polycrystalline thin films of $Ba(Sn_{0.1}Ti_{0.9})O_3$ were deposited on pt coated silicon substrates by pulsed excimer laser ablation technique. The room temperature dielectric constant of the $Ba(Sn_{0.1}Ti_{0.9})O_3$ films was 350 at a frequency of 100 kHz. The films showed a slightly diffused phase transition in the range of 275-340 K. The polarization hysteresis behavior confirmed the ferroelectric nature of the thin films. Remanent polarization $(P_r)$ and saturation polarization $(P_s)$ were 1.1. $ \mu C/cm^2$ and 3.2 $ \mu C/cm^2$ respectively. The asymmetric capacitance-voltage curve for $Ba(Sn_{0.1}Ti_{0.9})O_3$ was attributed to the difference in the nature of the electrodes. Dispersion in both the real $(\epsilon_r ')$ and imaginary $(\epsilon_r ")$ parts of the dielectric constant at low frequencies with increase in temperature was attributed to space charge contribution in the complex dielectric constant.

Item Type: Conference Paper
Additional Information: The Copyright belongs to The International Society for Optical Engineering.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 27 Apr 2006
Last Modified: 27 Aug 2008 11:55
URI: http://eprints.iisc.ernet.in/id/eprint/6500

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