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Mixed doping in $Ge_{10}Se_{90-x-}In_xBi_y$ glasses

Bhat, NA and Sangunni, KS and Kumar, A (2003) Mixed doping in $Ge_{10}Se_{90-x-}In_xBi_y$ glasses. In: Physics and Chemistry of Glasses, 44 (4). pp. 296-302.

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Abstract

In this paper, we report our studies on indium-bismuth mixed doping in the $Ge_{10}Se_{90-x-y}In_xBi_y$ glassy system. Out of the four compositions studied in this glassy system, the contribution to the current for the compositions with x=5 and y=10, x=10 and y=10 and x=5 and y=5 is mainly from electrons, while for the compositions with x=10 and y=5, it is mainly from holes. This n- and p-type conductivity and its origin in the mixed doped Ge-Se-In-Bi doped glasses are investigated using thermal, electrical and optical methods in order to understand the evolution of carrier type vis-a-vis the contributions from microscopic phase separation and defects.

Item Type: Journal Article
Additional Information: The Copyright belongs to Society of Glass Technology.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 03 May 2006
Last Modified: 27 Aug 2008 11:56
URI: http://eprints.iisc.ernet.in/id/eprint/6544

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