Bora, Achyut and Raychaudhuri, Arup K (2004) Study of conductance fluctuations (1/f alpha noise) in metal film with electromigration stressing. In: SPIE: Fluctuations and Noise in Materials, 26th May, Maspalomas Gran Canaria Island, Spain, Vol.5469, 353-361.Full text not available from this repository. (Request a copy)
We have studied the conductance fluctuation in metal film which is under electromigration stressing. The apparatus used by us allows measurement of noise with an ac 5-probe technique with a superimposed dc stressing current (typically $2MA/cm^2$). This allows measurement of noise in the film at different stages of the electromigration process till the film is damaged completely. We study both the spectral power $S_V(f)$ and also the probability density function (PDF) from the time series. The electromigration stressing was done to elevated temperature on Al and Cu metal lines grown by RF magnetron sputtering. Principal motivation of the investigation is to study low frequency defect relaxations in the metal film due to electromigration that give rise to conductance fluctuations with a spectral power $S_V(f) \alpha 1/f^\alpha . SV(f)$ (both magnitude as well as the spectral power quantified through $\alpha$ ) shows changes continuously and some times non-monotonically during the electromigration process and it is large just before the damage of the film. It was also observed that the PDF width increases significantly during the course of the em stressing and it changes from a Gaussian to a non-Gaussian PDF.
|Item Type:||Conference Paper|
|Additional Information:||The copyright belongs The International Society for Optical Engineering.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||11 Dec 2006|
|Last Modified:||27 Aug 2008 11:57|
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