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A New Gate Drive Circuit for MOSFETs Switching at Low Frequency

Prakash, Narayana SR and Iyengar, BSR and Mohan, Ananda PV (1991) A New Gate Drive Circuit for MOSFETs Switching at Low Frequency. In: 1991 IEEE Region 10 International Conference on EC3-Energy, Computer, Communication and Control Systems. TENCON '91, 28-30 August, New Delhi,India, Vol.1, 227-230.

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Abstract

A new gate drive circuit, with ferrite core transformer isolation, for power MOSFETs switching at low frequency in the macro Hertz range has been presented . The technique involves periodic refreshing of charge on the effective gate source capacitance of the MOSFET in order to ensure low ON-state resistance,,$R_{DS}$ (ON ), by maintaining its gate source voltage above the threshold level.The simulation of the drive circuit using circuit analysis program PSPICE is described with results and relevant waveforms.

Item Type: Conference Paper
Additional Information: Copyright 1990 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 25 May 2006
Last Modified: 19 Sep 2010 04:27
URI: http://eprints.iisc.ernet.in/id/eprint/6901

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