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Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices

Bhuvaneswari, HB and Reddy, Rajagopal V and Rao, Mohan G (2006) Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices. In: Journal of Materials Science: Materials in Electronics, 17 (5). pp. 335-339.

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Abstract

The electrical properties of DC reactive sputtered zirconium-nitride metallized metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) devices on $TiO_2/p-Si$ and $TiO_2/ZrN$ films were studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements at room temperature. Capacitances of the $ZrN/TiO_2/p^{-Si}$ MOS device were measured in accumulation mode and inversion mode, from which flat band capacitance was found to be 2.86pF, which corresponds to flat band voltage of -1.7 V. Fixed oxide charged density and interface state density was found to be $1.63\times10{^10}\hspace{2mm}cm^{-2}$ and $6.3\times10{^11}\hspace{2mm}cm^{-2}\hspace{2mm}eV^{-1}$. I-V characteristics revealed that the leakage current density was of $0.5 mA/cm^{2}$ in accumulation mode and $2 mA/cm^2$ in inversion mode at a field of 0.12 MV/cm, respectively. Dielectric breakdown of $ZrN/TiO{_2}/p-Si$ device was found to be 0.12 MV/cm in accumulation mode. Based on the C-V and I-V characteristics, the $ZrN/TiO_2/ZrN$ structure showed no variation in the capacitance value as the bias voltage was changed.

Item Type: Journal Article
Additional Information: Copy rights of this article belongs to Springer Netherlands
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 25 Aug 2008
Last Modified: 19 Sep 2010 04:28
URI: http://eprints.iisc.ernet.in/id/eprint/7195

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