Thin films of iron oxide by low pressure MOCVD using a novel precursor: tris(t-butyl-3-oxo-butanoato)iron(III)

Shalini, K and Subbanna, GN and Chandrasekaran, S and Shivashankar, SA (2003) Thin films of iron oxide by low pressure MOCVD using a novel precursor: tris(t-butyl-3-oxo-butanoato)iron(III). In: Thin Solid Films, 424 (1). pp. 56-60.

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Abstract

Deposition of thin films of iron oxide on glass has been carried out using a novel precursor, tris(t-butyl-3-oxo-butanoato)iron(III), in a low-pressure metalorganic chemical vapor deposition (MOCVD) system. The new precursor was characterized for its thermal properties by thermogravimetry and differential thermal analysis. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy, scanning electron microscopy, and by optical measurements. XRD studies reveal that films grown at substrate temperatures below ~550 °C and at low oxygen flow rates comprise only the phase $Fe_3O_4$ (magnetite). At higher temperatures and at higher oxygen flow rates, an increasing proportion of $\alpha-Fe_2O_3$ is formed along with $Fe_3O_4$. Films of magnetite grown under different reactive ambients—oxygen and nitrous oxide—have very different morphologies, as revealed by scanning electron microscopic studies.

Item Type: Journal Article Copyright of this article belongs to Elsevier. Chemical vapor deposition;Iron oxide;Thin films; Metalorganic Division of Chemical Sciences > Materials Research Centre 02 Jun 2006 19 Sep 2010 04:28 http://eprints.iisc.ernet.in/id/eprint/7311