Saxena, PK and Bhat, N (2003) Process technique for SEU reliability improvement of deep sub-micron SRAM cell. In: Solid-State Electronics, 47 (4). pp. 661-664.
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A technique is proposed to improve single event upset reliability of 0.09 μm SRAM cell by introducing an extra implant step similar to pocket halo, super steep retrograde channel and $V_t$ adjust implant steps in the existing process flow. It is shown that by changing the energy, dose and angle of implant, a heavily doped p+ region of high recombination rate can be introduced beneath the source/drain junctions. This results in decrease in effective charge collection volume, thereby increasing critical LET to flip the SRAM cell.
|Item Type:||Journal Article|
|Additional Information:||copyright of this article belongs to Elsevier.|
|Keywords:||Linear energy transfer;Super steep retrograde channel;Pocket halo;Dead layer|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||02 Jun 2006|
|Last Modified:||19 Sep 2010 04:28|
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