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Studies on single layer $CeO_2$ and $SiO_2$ films deposited by rotating crucible electron beam evaporation

Rao, Narasimha K and Shivlingappa, L and Mohan, S (2003) Studies on single layer $CeO_2$ and $SiO_2$ films deposited by rotating crucible electron beam evaporation. In: Materials Science and Engineering B, 98 (1). pp. 38-44.

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Abstract

High index $CeO_2$ films and low index $SiO_2$ films are widely used in multi layer optical thin film devices, such as high reflectors, interference filters, anti reflection coatings, etc. Optical properties, such as refractive index, transmittance in the UV, Visible and IR depends upon the deposition conditions, especially the substrate temperature. Single layer films of $CeO_2$ and $SiO_2$ have been deposited using a novel rotating crucible electron beam evaporation technique. The refractive indices and UV, VIS and IR transmittance of the films have been measured by varying substrate temperature in the range ambient to $400 ^o\c$C. The structure of $CeO_2$ films has also been studied. The refractive index of $CeO_2$ films at 550 nm increased from 2.00 to 2.41 as the substrate temperature was increased from ambient to $400 ^o\c$C. The extinction coefficient of these films was negligibly small even at elevated substrate temperatures. $CeO_2$ films deposited even at ambient temperature were crystalline. The refractive index of $SiO_2$ films increased marginally from 1.46 to 1.48. UV, Visible and IR transmission characteristics of $SiO_2$ films indicate that the films are stoichiometric. The density of $CeO_2$ and $SiO_2$ films has also been estimated with substrate temperature.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Electron beam evaporation;Optical properties;Substrate temperature;CeO2 and SiO2 films;Structural properties; Density of film
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 02 Jun 2006
Last Modified: 19 Sep 2010 04:28
URI: http://eprints.iisc.ernet.in/id/eprint/7327

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