ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Pulsed excimer laser ablation growth and characterization of $Ba(Sn_{0.1}Ti_{0.9})O_3$ thin films

Halder, S and Victor, P and Laha, A and Bhattacharya, S and Krupanidhi, SB and Agarwal, G and Singh, AK (2002) Pulsed excimer laser ablation growth and characterization of $Ba(Sn_{0.1}Ti_{0.9})O_3$ thin films. In: Solid State Communications, 121 (6-7). pp. 329-332.

[img] PDF
Pulsed_excimer_laser_ablation_growth.pdf
Restricted to Registered users only

Download (104Kb) | Request a copy

Abstract

Polycrystalline thin films of $Ba(Sn_{0.1}Ti_{0.9})O_3$ were deposited on Pt coated silicon substrates by pulsed excimer laser ablation technique. The room temperature dielectric constant of the $Ba(Sn_{0.1}Ti_{0.9})O_3$ films was 350 at a frequency of 100 kHz. The films showed a slightly diffused phase transition in the range of 275–340 K. The polarization hysteresis behavior confirmed the ferroelectric nature of the thin films. Remanent polarization $(P_r)$ and saturation polarization $(P_s)$ were 1.1 and $3.2\mu C/cm^2$, respectively. The asymmetric capacitance–voltage curve for $Ba(Sn_{0.1}Ti_{0.9})O_3$ was attributed to the difference in the nature of the electrodes. Dispersion in both the real $(\varepsilon^{'}_ r)$ and imaginary $(\varepsilon^{"}_r)$ parts of the dielectric constant at low frequencies with increase in temperature was attributed to space charge contribution in the complex dielectric constant.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: A. Ferroelectrics;B. Laser Ablation thin films;C. Phase transition
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 02 Jun 2006
Last Modified: 19 Sep 2010 04:28
URI: http://eprints.iisc.ernet.in/id/eprint/7407

Actions (login required)

View Item View Item