Patra, SK and Rao, Mohan G (2002) Studies on structural and electrical properties of silicon nitride films deposited by unbalanced magnetron sputter deposition. In: Materials Science &Engineering B, 90 (1-2). pp. 90-98.
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Unbalanced magnetron sputtering has been used to deposit silicon nitride films. Films were deposited at substrate temperature of 500 °C, nitrogen partial pressure of $1 * 10^ - ^ 4$ mbar and sputtering pressure of $1 * 10^ - ^ 3$ mbar. Substrate bias has been varied in order to change the energy of the ions bombarding the substrate. The structural and compositional characterization has been done using FTIR spectroscopy, atomic force microscopy, and Auger electron spectroscopy. A detailed study of electrical properties has been carried out in metal–insulator–semiconductor and metal–insulator–metal configurations. From the C–V measurements dielectric constant and interface charge density were calculated, while the I–V characteristics of the films were used to determine resistivity, dielectric strength and critical field. The deposited films showed resistivity of the order of $10^1^2 \Omega$ cm, dielectric constant 7.25, with an interface state density of $8 * 10^1^0 eV^ - ^1 cm^ - ^2$. The observed variation in the properties of the films has been explained in terms of changes in composition and microstructure of the films.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Keywords:||Unbalanced magnetron sputtering;Ion assisted growth;Silicon nitride films|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||03 Jun 2006|
|Last Modified:||19 Sep 2010 04:28|
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