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Strongly oriented thin films of $Co_3O_4$ deposited on single-crystal MgO(1 0 0) by low-pressure, low-temperature MOCVD

Mane, Anil U and Shalini, K and Wohlfart, A and Devi, A and Shivashankar, SA (2002) Strongly oriented thin films of $Co_3O_4$ deposited on single-crystal MgO(1 0 0) by low-pressure, low-temperature MOCVD. In: Journal of Crystal Growth, 240 (1-2). pp. 157-163.

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Abstract

We have grown epitaxial thin films of $Co_3O_4$ on single-crystal MgO at $\sim400^o \hspace {2mm} C$ by low-pressure thermal metalorganic chemical vapor deposition using cobalt(II) acetylacetonate as the precursor. X-ray phi-scan analysis shows that cube-on-cube epitaxy of $Co_3O_4$ occurs on MgO(100) in the temperature range $\sim400-550 ^o \hspace {2mm} C$. Films grown on MgO(1 0 0) at 410 degrees C show a rocking curve FWHM of only $0.44^o \hspace {2mm}$ degrees , despite a rather large lattice mismatch of 4.1%. This is interpreted to be due to the excellent match between the oxygen sublattices of $Co_3O_4$ (1 0 0) and MgO(1 0 0). The strong epitaxy which occurs, leads to a low activation energy $(E_a)$ for growth on MgO. Scanning electron microscopy analysis shows faceted grains characteristic of the cubic symmetry of $Co_3O_4$, the faceting being stronger at higher growth temperatures.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: A1. X-ray diffraction;A3. Metalorganic chemical vapor deposition;A3. Vapor phase epitaxy;B1.Cobalt oxide;B1.Oxides
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 02 Jun 2006
Last Modified: 19 Sep 2010 04:29
URI: http://eprints.iisc.ernet.in/id/eprint/7496

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