Vargheese, Deenamma K and Rao, Mohan G and Balasubramanian, TV and Kumar, Sanjiv (2001) Preparation and characterization of TiN films by electron cyclotron resonance (ECR) sputtering for diffusion barrier applications. In: Materials Science and Engineering B, 83 (1-3). pp. 242-248.
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An electron cyclotron resonance (ECR) plasma system has been used to deposit TiN films by reactive sputtering process. The effect of magnetic mirror field on the current–voltage characteristics of the cylindrical sputtering cathode has been studied. Stoichiometric TiN films with minimum stress and specific resistivity of 82 μΩ cm and surface roughness of 3 Å have been deposited at a substrate temperature of 350°C. The films showed strong (2 0 0) orientation on Si(1 0 0), Si(1 1 1) and glass substrates. The use of TiN as a barrier layer in copper metalisation has been investigated. No detectable diffusion was observed up to a temperature of 700°C for a film thickness of 600 Å. The resistivity data is in conformity with the RBS depth profiling. The quality of the films has been explained in terms of improved microstructure and packing density as a result of high-density ion bombardment.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Keywords:||TiN films;Electron cyclotron resonance (ECR);Diffusion barrier|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||07 Jun 2006|
|Last Modified:||19 Sep 2010 04:29|
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