ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Fracton Dimension of Porous Silicon as Determined by Low-Frequency Raman Scattering

Roy, Anushree and Sood, Ajay K (1995) Fracton Dimension of Porous Silicon as Determined by Low-Frequency Raman Scattering. In: Solid State Communications, 93 (12). pp. 995-998.

[img] PDF
F’racton_Ditiension-49.pdf
Restricted to Registered users only

Download (355Kb) | Request a copy

Abstract

Porous silicon has been shown to have fractal morphology below a certain length scale. Using iow frequency Raman Scattering, we report the kacton dimension d which characterises the vibrational density of states. q(w)$\sim w^{(\v{d}-1)}$. of the fractal network. Taking the Hausdorff dimension D to be 2.5, the value of d obtained is equa1 to $1.42\pm.02,$ which is close to the theoretically predicted value of 4/3.

Item Type: Journal Article
Additional Information: The copyright belongs to Elsevier.
Keywords: A.nanoscructures;D.phonons;E.inelastic light scattering
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 14 Jun 2006
Last Modified: 19 Sep 2010 04:29
URI: http://eprints.iisc.ernet.in/id/eprint/7616

Actions (login required)

View Item View Item